Articles
| Open Access |
Charge State Of Impurity Atoms In Semiconductors Studyed By The Emission Mössbauer Spectroscopy Method
Ergash Yuldashevich Turaev , Doctor Of Physical And Mathematical Sciences, Professor Of Termez State University, Uzbekistan Jasurbek Jumaev , Master’s Students Of Termez State University, Uzbekistan Shahlo Karimova , Master’s Students Of Termez State University, UzbekistanAbstract
When studying the charge state and symmetry of the local environment of impurities, based on the data of nuclear gamma-resonance spectroscopy, it is concluded that the state of impurity atoms depends both on the type of conductivity and on whether these atoms are in the surface layer or in the bulk of semiconductors.
Keywords
Charge state,, symmetry, , local environment of impurities, nuclear gamma-resonance spectroscopy, semiconductor, surface layer, atoms
References
Turaev E.Yu., Seregin PP, “The nature of the state formed by tin and iron atoms in arsenic selenide” UFZh, 1991, p. 81-85.
Turaev E.Yu. et al. "The nature of the electrical inactivity of impurity atoms in the gallium-tellurium system." Physics and chemistry of glass, 1987, v. 13, pp. 696-700.
Turaev E.Yu. et al. "Study of the state of impurity atoms in amorphous silicon." Inorganic materials, 1991, vol. 27, p. 899-903.
Turaev E.Yu. et al. Seregin PP, “Investigation by the Mössbauer method of the effect of the crystal-glass transition on the structure of semiconductors.” Letter to ZhETF, no. 2, 1974, pp. 81-82.
Turaev E.Yu., Seregin PP, “Electronic spectra of crystalline and glassy arsenic chalcogenides.” Physics and chemistry of glass, 1977, vol. 3, no. 5 pp. 103-106.
Article Statistics
Downloads
Copyright License
Copyright (c) 2021 The American Journal of Applied sciences
This work is licensed under a Creative Commons Attribution 4.0 International License.