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DOI:
https://doi.org/10.37547/tajas/Volume02Issue10-06
Study Of The Influence Of Radiation Gamma And Thermal Annealing On The Dlts Spectra Of Diodes From Si (Cr)
Sultanov N.A. , Doctor Of Physical And Mathematical Sciences, Professor, Department Of Physics, Fergana Polytechnic Institute, Fergana, Uzbekistan Raximov E.T. , Candidate Of Physical And Mathematical Sciences, Associate Professor, Department Of Physics, Fergana Polytechnic Institute, Fergana, Uzbekistan Mirzajonov Z. , Candidate Of Physical And Mathematical Sciences, Associate Professor, Department Of Physics, Fergana Polytechnic Institute, Fergana, Uzbekistan Axmadjonov M.F. , Assistant, Department Of Physics, Fergana Polytechnic Institute, Fergana, UzbekistanAbstract
It was shown from capacitive measurements that the concentration of chromium levels decreases after irradiation of the samples with gamma quanta of the 60Co isotope, and the rate of formation of A centres in Si (Cr) is 8-10 times higher than in the control samples.
Keywords
Irradiation, gamma quanta
References
Lebedev A.A., Sultanov N.A. (1970). Some properties of silicon doped with chromium. ФТП. 4(11). p. 2208-2210.
Chen, J. W., & Milnes, A. G. (1980). Energy levels in silicon. AnRMS, 10, 157-228.
Lebedev A.A., Sultanov N.A., Ekke V. (1986). Investigation of the effect of gamma irradiation on the spectrum of deep levels in silicon doped with zinc. ФТП. 21(1). p.p. 18-22.
Lebedev, A. A., Sultanov, N. A., & Tuchkevich, V. M. (1971). N-type negative resistance and photoconductivity of sulfur-doped p-type Si(N-type negative resistance, photoconductivity and I-V characteristics of sulfur-doped p-type Si, showing hole capture cross-section dependence on the electric field). Soviet Physics-Semiconductors, 5, 25-31.
Lebedev, A. A., Sultanov, N. A., & Ecke, W. (1987). Influence of uniaxial pressure on transient capacitance spectroscopy of deep levels in SI-ZN. Soviet Physics Semiconductors-USSR, 21(2), 193-195.
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