This study explores the optimization of passivation techniques for monocrystalline solar cells through the assessment of carbon content in silicon-carbon alloys. Passivation layers play a critical role in enhancing the efficiency and performance of solar cells by reducing recombination losses at the semiconductor surface. Silicon-carbon alloys offer a promising avenue for passivation due to their tunable properties and compatibility with existing manufacturing processes. By systematically varying the carbon content in silicon-carbon alloys, this research investigates its impact on passivation quality, surface recombination velocity, and photovoltaic device performance. Characterization techniques such as spectroscopic ellipsometry, surface photovoltage measurements, and photoluminescence imaging are employed to assess passivation layer thickness, interface quality, and carrier lifetime. The findings provide valuable insights into the role of carbon content in optimizing passivation effectiveness and offer pathways for enhancing the efficiency and stability of monocrystalline solar cells.

Passivation, Monocrystalline solar cells, Silicon-carbon alloys

Qayyum A, et al. Growth and properties of glow-discharge hydrogenated amorphous silicon-carbon alloys from silane-pro-pane mixtures. Thin Solid Films. 1988;164:221-226.

Patil SB, et al. Photoluminescent, wide-bandgap a-SiC: H alloy films deposited by Cat-CVD using acetylene. Thin Solid Films. 2003;430:244-248.

Magafas L, et al. Optimization of Al/a-SiC:H optical sensor device by means of thermal annealing. Microelectronics. 2007;38:1196-1201.

Pereyra I, et al. Thick SiOxNy and SiO2 films obtained by PECVD technique at low temperature. Thin Solid Films. 1998;332:40-45.

Li SX, et al. Hydrogenated amorphous silicon-carbide thin films with high photo-sensitivity prepared by layer-by-layer hydrogen annealing technique. Chen Appl Surf Sci. 2013;270:287-291.

Rajab SM, et al. Effect of the thermal annealing on the electrical and physical properties of SiC thin films produced by RF magnetron sputtering. Thin Solid Films. 2006;515:170-175.

Cathrine Y, et al. Reactive plasma deposited Six C y Hz films. Thin Solid Films. 1979;60:193-200.

Wieder H, et al. Vibrational spectrum of hydrogenated amorphous Si-C films. Phys Stat Sol. 1979:99.

Munekata H, et al. White photoluminescence of amorphous silicon‐carbon alloy prepared by glow‐discharge decomposition of tetramethylsilane. Appl Phys Lett. 1980;37:536.

Solomon I, et al. Band structure of carbonated amorphous silicon studied by optical, photoelectron, and x-ray spectroscopy. Phy Rev. 1988;38.

Solomon I, et al. Selective low-power plasma decomposition of silane-methane mixtures for the preparation of methylated amorphous silicon. Phys Rev. 1988.